Two-dimensional materials unlock the path to ultra-low-power transistors

Transistor used in every circuits are small one which results in overheating.
Searching for good conductors allowing efficient control over the electron’s spin.
This can be achieved with little effort when 2 dimensional Graphene is paired with certain semiconducting material.
 Application of small voltage across graphene layer induces a net polarization of conducting spins.
‘Spin currents’ — built from ‘up’ and ‘down’ spins flowing in opposite directions — carry no net charge, and therefore in theory, produce no heating. The control of spin information would therefore open the path towards ultra-energy-efficient computer chips. The current-induced polarization of the electron’s spin is an elegant relativistic phenomenon that arises at the interface between different materials.
The main advantage is flexible, atomically thin nature and also semiconducting component opens up the possibility for integration with optical communication networks.
The possibility of orienting the electron spin with electrical currents is attracting a lot of attention in the spintronics community and arises generally as a consequence of specific symmetry conditions.
The efficiency of charge-to-spin conversion can be quite high even at room temperature.
Current-induced spin polarization in non-magnetic media was first demonstrated in 2001 in semiconductors. Graphene enable charge-to-spin conversion efficiency of up to 94 per cent. This opens up the possibility of a graphene-based composite material becoming the basis for ultra-compact and greener spin-logic devices.

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